Abstract
ABSTRACTThe advanced method of transient microwave photoconductivity (AMTMP) represents a new method based on cavity perturbation theory, microwave photoconductivity and harmonic oscillator model analysis. AMTMP provides a direct observation of changes to the complex dielectric constant, and free and trapped electron decays can be studied separately. The results obtained for polycrystalline CdSe thin films clearly indicate that a multiple trapping model developed for amorphous materials does not provide a satisfactory description. For SI GaAs the harmonic oscillator model provides a quantitative interpretation. The limitations are discussed for the application of this method to porous Si.
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