Abstract
An innovated simple fabrication process is adopted to fabricate a novel gate self-aligned (GSA) graphene field effect transistor (GFET). First, stacked source/drain electrodes with triple-layer metal are formed. Then, after slightly etching of the second metal layer, laterally recessed profiles are formed, which leads to the self-aligned (SA) gate. A noticeable feature of the GSA-GFET is that the access resistance is not changed with the level of the lateral recessing, which leads to a very small access resistance. Compared with the non-SA-GFET with same gate length and width, the contact resistance of the GSA-GFET is reduced by 68%, the peak gm is 3.6 times improved, the on/off ratio is increased from 1.8 to 3.2.
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