Abstract
We present a novel method to form the source/ drain (S/D) cavity for pFET performance improvement—we named this cavity as doping-assisted cavity as its profile is controlled by the lightly doped drain implantation. By utilizing the enhanced etch rate in chlorine-based dry etch process, the cavity profile is aligned to the arsenic dopant contour, enabling a lower tip height that mitigates short-channel effects. In this paper, doping-assisted S/D pFET cavity demonstrates 7% device performance improvement with matched tip CD. In addition, this new cavity enables a smaller tip CD that offers the opportunity for further device performance improvement.
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