A novel approach for leakage current reduction of 14nm NMOS device using HfO2 dielectric

Abstract

This paper explores the use of high-k material in place of SiO2 in MOSFET for 14nm technology, new device materials are required that can enhance the performance of MOSFET. The use of high-k material in MOSFET can triumph over the problem of power dissipation and leakage current. This paper explores the suitability of HfO2 as gate dielectric material at 14nm technology. The performance of the device was tested through simulation using sentaurus structure editor in TCAD. The device shows a good refinement on its result of subthreshold leakage current, Ioff, and drive current, Ion for HfO2 dielectric constants (k). The simulation results reveal that Ion / Ioff reduce by 62.94%, which proves that HfO2 is the best dielectric material and it can replace SiO2.