Abstract
AbstractA new approach, based on scattering waves, for the analysis of distributed and traveling‐wave amplifiers is developed. It uses the scattering parameters of the passive elements and the measured and calculated parameters of the MESFET transistor. Thus, the approach overcomes the assumption of the simplified model of the MESFET transistor as they are needed in the already known methods. This approach can be used for both lumped as well as distributed circuits. Consequently, it can be applied to a distributed amplifier with artificial or real transmission lines. We demonstrate its validity through experimental results. Furthermore, it easily considers the effects of reflections at different ports of the amplifier which have allowed us to achieve an improvement of the power gain approaching 60% at midband using a new topology of a distributed amplifier. © 2002 John Wiley & Sons, Inc. Microwave Opt Technol Lett 32: 207–211, 2002.
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