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Abstract
An amorphous silicon doping superlattice device with different period lengths is developed, providing a double switching characteristic that has been demonstrated to yield multiple stable states for multiple-valued logic applications. Unlike those of conventional switching devices, the switching characteristics of the present device are caused by avalanche multiplication and a barrier-lowering effect. A tristate memory cell using this device is proposed and discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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