Abstract

Large bandwidth infrared light emitting diodes (LEDs) were fabricated by liquid-phase epitaxy. The spectral bandwidth is a maximum of 131 nm at room temperature (754-885 nm). Normally, the bandwidth of a 850-nm LED is 60 nm. The mean spectral bandwidth of the new LEDs is 110 nm at room temperature, 99 nm at -55 degrees C, and 120 nm at +125 degrees C. The optical power coupled through a 100-m 100- mu m-core-diameter optical fiber with NA=0.29 is typically -3 dBm. The power decrease by change of temperature is 3%/ degrees C. Initial results from an accelerated endurance test are presented. The characteristics of the new large bandwidth LED show good stability over a temperature range of -55 to +125 degrees C, which makes it suitable for wavelength division multiplex applications in aircraft and space systems. >

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