A Novel 4H-SiC MESFET with a Heavily Doped Region, a Lightly Doped Region and an Insulated Region

Hujun Jia,Xiaowei Wang,Yintang Yang,Mengyu Dong,Shunwei Zhu

doi:10.3390/mi12050488

Abstract

A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding a heavily doped region, reduces the gate-source capacitance (Cgs) by adding a lightly doped region and improves the breakdown voltage (Vb) by embedding an insulated region (Si3N4). Compared to the double-recessed (DR) structure, the saturation current, the transconductance, the breakdown voltage, the maximum oscillation frequency (fmax), the maximum power added efficiency and the maximum theoretical output power density (Pmax) of the novel structure is increased by 24%, 21%, 9%, 11%, 14% and 34%, respectively. Therefore, the novel structure has excellent performance and has a broader application prospect than the double recessed structure.

Highlights

Introduction an Insulated RegionMicromachinesThe third-generation semiconductor is the development trend of the semiconductor.The third-generation semiconductor material is mainly divided into silicon carbide and gallium nitride
We propose a novel 4H‐SiC MESFET with a heavily doped region, a lightly doped region and an insulated region
The heavily doped region and lightly doped region can be formed by ion implantation and andactivation deposited by using a fabrication mask, andoffinally, the metal gate manufactured bysteps a similar processes

Summary

Device

Methods structure are greater than those of the DR structure [18]. We explore the maximum. A lightly doped layer, the novel Structure structureand has an additional. Compared to traditional DR structure, in addition to the substrate, buffer and channel layer, the devices. The novel structure has an additional heavily doped region, a lightly doped region and an insulated region in the channel. The heavily doped region and lightly doped region can be formed by ion implantation and andactivation deposited by using a fabrication mask, andoffinally, the metal gate manufactured bysteps a similar processes. SiC MESFET fying the model parameters of GaAs MESFET, so that it could better reflect the trend of while the process of GaAs material is mature, we fit the model of SiC MESFET by modifying power added efficiency of devices. IV characteristic curve ofThe devices the measurement were compared those in ISE-TCAD.

Simulation Results and Discussion

Relationship between

Conclusions