Abstract
This paper reports an ultra low on-state-resistance p-channel power MOSFET without deterioration of the gate breakdown voltage. This p-channel MOSFET has a trench gate structure and an optimized channel structure. These effects make the channel resistance small without thinning of the gate oxide thickness, therefore it is possible for the total chip resistance to be reduced. As a result at BVDSS=42 V, this p-ch MOSFET exhibits an active area specific on-resistance RDS(on) A=1.5 m/spl Omega/cm/sup 2/ (at VGS-Vth=2 V), 1.8 m/spl Omega/cm/sup 2/ (at VGS-Vth=1.5 V), it remains 20 V of the maximum voltage applicable between gate and source.
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