A Novel 2.5–3.1 GHz Wide-Band Low-Noise Amplifier in 0.18 $$\upmu \hbox {m}$$ μ m CMOS

Abstract

Aiming for the simultaneous realization of constant gain, accurate input and output impedance matching and minimum noise figure (NF) over a wide frequency range, the circuit topology and detailed design of wide broadband low noise amplifier (LNA) are presented in this paper. A novel 2.5---3.1 GHz wide-band LNA with unique characteristics has been presented. Its design and layout are done by TSMC 0.18 $$\upmu \hbox {m}$$μm technology. Common gate stage has been used to improve input matching. In order to enhance output matching and reduce the noise as well, a buffer stage is utilized. Mid-stages which tend to improve the gain and reverse isolation are exploited. The proposed LNA achieves a power gain of 15.9 dB, a NF of 3.5 dB with an input return loss less than $$-$$-11.6, output return loss of $$-$$-19.2 to $$-$$-19 and reverse isolation of $$-$$-38 dB. The LNA consumes 54.6 mW under a supply voltage of 2 V while having some acceptable characteristics.