Abstract
A 1.3-µm AlGaInAs/InP buried heterostructure (BH) stripe distributed feedback laser with a novel AlInAs/InP complex-coupled grating grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) is proposed and demonstrated. A high characteristic temperature (T0=90 K between 20–80°C) and temperature-insensitive slope efficiency (0.25 dB drop from 20 to 80°C) in 1.3 µm AlGaInAs/InP DFB lasers was obtained by introducing Al(Ga)InAs graded-index separate-confinement heterostructure (GRINSCH) layers and a strained-compensated (SC) multi-quantum well (MQW).
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