Abstract
The electronic band structures of (GaAs)n/(AIAs)1 and (GaAs)1/(AIAs)n(n=1∼10) superlattices were investigated by means of an improved tight-binding method in which the overlap integrals up to the second nearest-neighbor atoms, including new parameters, were explicitly taken into account. Kroemer's rule for the band offset value was employed. The resulting band structure of superlattices in the extended zone scheme were compared with the bulk band structure while paying attention to the band-folding effect due to a periodic insertion of one atomic monolayer. A possibility of transforming an indirect-gap material into a direct-gap material by such artificial insertion of another material is discussed and the optical oscillator strength at the Γ-point is estimated for each n.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
