Abstract
A normal incidence p-type compressively strained layer superlattice (SL) In0.27Ga0.73As/Al0.15Ga0.85As quantum well infrared photodetector with a spectral response peak at 19.2 μm and a cutoff wavelength λc>20 μm under moderate background illumination have been demonstrated in this work. A responsivity of 50 mA/W and a gain-quantum efficiency product (ηg) of 0.32% at Vb=20 mV and T=40 K were obtained for this device. The device layer structure consists of four InGaAs/AlGaAs SL-absorber layers sandwiched by wide GaAs barrier layers. Results of the responsivity, dark current, noise, background photocurrent measurements, and analysis of the device performance are discussed.
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