A Nonvolatile Fast-Read Two-Transistor SRAM Based on Spintronic Devices

Abstract

This paper proposes a compact nonvolatile three-terminal two-transistor spintronic memory cell with a fast-read operation. It is applicable to a variety of current-driven and voltage-controlled write mechanisms, such as spin diffusion, spin Hall effect, domain wall motion, and magnetoelectric effect. Compared to the prior three-terminal spintronic memory proposal, the new cell provides 20% improvement in cell density. Compared to the conventional spin torque transfer random access memory, the proposed cell separates the read and write paths, and improves the read energy-delay product by up to $22\times $ considering process variations for transistors and MTJs.