Abstract
A nonquasi-static table-based (NQS-TB) small-signal model, which has been used successfully in modeling FETs, is applied to a heterojunction bipolar transistor (HBT). The capacitive couplings associated with base cause the conventional model to be invalid at high frequencies. To take these effects into account, a new model is proposed that is compatible with a small-signal T-model topology. We demonstrate good agreement between the measured and simulated S-parameters over the range of 1-40 GHz.
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