A nonlinear HP-type complementary resistive switch

Paul K Radtke,Lutz Schimansky-Geier

doi:10.1063/1.4952755

Paul K Radtke, Lutz Schimansky-Geier

Open Access

https://doi.org/10.1063/1.4952755

Copy DOI

Journal: AIP Advances	Publication Date: May 1, 2016
Citations: 4	License type: CC BY 4.0

Affiliation: Humboldt-Universität zu Berlin

Abstract

Resistive Switching (RS) is the change in resistance of a dielectric under the influence of an external current or electric field. This change is non-volatile, and the basis of both the memristor and resistive random access memory. In the latter, high integration densities favor the anti-serial combination of two RS-elements to a single cell, termed the complementary resistive switch (CRS). Motivated by the irregular shape of the filament protruding into the device, we suggest a nonlinearity in the resistance-interpolation function, characterized by a single parameter p. Thereby the original HP-memristor is expanded upon. We numerically simulate and analytically solve this model. Further, the nonlinearity allows for its application to the CRS.

Highlights

Ever since its linkage to resistive switching, the memristor has captured the phantasy of physicists and engineers alike
High integration densities favor the anti-serial combination of two Resistive Switching (RS)-elements to a single cell, termed the complementary resistive switch (CRS)
Motivated by the irregular shape of the filament protruding into the device, we suggest a nonlinearity in the resistance-interpolation function, characterized by a single parameter p

Summary

INTRODUCTION

Ever since its linkage to resistive switching, the memristor has captured the phantasy of physicists and engineers alike. Due to the high resistance, the current and associated energy dissipation through the memory cell and occurring sneak paths around it are drastically reduced. We suggest an analytically solvable model to reproduce and elucidate the characteristics of the aforementioned device To this end we introduce (i) a nonlinearity in the weighting of the high and low resistance parts. In this case, as the filament builds up, the broad base is created first, resulting in a lower resistance at identical length compared to the rectangular filament (p = 1).

Roff p

CONCLUSION