Abstract
An improved nonlinear circuit model for IMPATT diodes is presented for which each element bears a simple relationship with the physical operating mechanisms inside the device. The model contains lumped nonlinear elements as well as lumped and distributed linear elements. In its most general form it incorporates various second-order effects heretofore neglected in other circuit models. These include the effects due to unequal hole and electron ionization rates, unequal hole and electron drift velocities, and carrier diffusion.
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