Abstract
With the development of energy storage systems towards high power, high voltage and high switching frequency, the switches need to withstand higher voltage stress and possible high power loss. In this paper, a non-isolated three-level bidirectional DC-DC converter using the metal-oxide-semiconductor field-effect transistor (MOSFET) as the switches is proposed, where an appropriate control strategy is adopted to achieve soft-switching control. As a result of the soft switching technology and small on-resistance MOSFETs, this scheme can improve efficiency and power density significantly, compared with hard-switching topologies using the insulated gate bipolar transistor (IGBT). Simulation results have verified the correctness of the proposed three-level bidirectional converter and the rationality of the control method.
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