A non linear model to analyze the DC performance of SiC MESFET

Abstract

This paper presents a detailed analytical and non-linear mathematical model describing the I − V characteristics of submicron silicon Carbide (SiC) Metal semiconductor field effect transistor (MESFETs). Silicon Carbide (SiC) MESFET is a wideband device capable to handle high power at microwave frequencies. It is shown that our proposed model can predict the output characteristics of the device both under normal conditions as well as at relatively high drain bias. A comparison of our proposed model is made with Riaz, Khan.M, Shamsir, Kompa, Zhao, Raffo, Josef, Guidry, Mishra and recently reported 4H-silicon carbide (SiC) MESFET large signal I-V models by using the Particle Swarm Optimization (PSO) process. A full SiC MESFET analysis is provided and using experimental data, the validity of the proposed technique is demonstrated. The results show that the new model has the advantages of high accuracy, easily making initial value and robustness over other models. Our proposed technique improves accuracy in predicting the I-V characteristic and output characteristic of SiC MESFETs device. Silicon Carbide (SiC) MESFET is a wide band platform capable of handling microwave frequencies with high efficiency. SiC MESFETs operations are typically conducted under high bias conditions, in which the response is modified from normal. The proposed technique is useful for evaluating the output of high power microwave SiC MESFETs over a wider bias range.