Abstract
This work demonstrates a non-destructive optical diagnostic technique for determining grain size of polycrystalline silicon (poly-Si) and presents the result of melt-mediated phase transformation after excimer laser crystallization. The relationship between the average grain size of poly-Si films and transmissivity is investigated experimentally, which is found to coincide with the observation by field-emission scanning electron microscopy. This methodology can be used in association with a variety of non-destructive monitoring schemes.
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