Abstract
This letter reports a low noise submillimeter-wave mixer using NbN tunnel junctions integrated in Nb matching circuits. The double side band receiver noise temperature was 245 K at 345 GHz. Plasma conditions for NbN film deposition on quartz substrates at room temperature are created by using a second Nb target as a selective nitrogen pump. Electrodes for tunnel junctions with critical temperatures above 15 K and normal state resistivities in the range from 130 to 160 μΩ cm were obtained. This permits integrating NbN junctions into normal metal or non-NbN superconducting matching circuits, which is of great interest for THz mixers.
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