Abstract
A wideband Darlington amplifier topology which is well suited for maximum-bandwidth, moderate-gain, matched-impedance applications is described. A test circuit using a silicon bipolar monolithic technology with an f/sub T/ of 9 GHz has been fabricated. Measured results show a 9.3 dB insertion gain and a 3.2 GHz bandwidth for the packaged device.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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