Abstract
Ultrathin films of InSe are obtained via the thermal evaporation of indium selenide in a vacuum. The results from EDS and EDX analysis are given, and it is seen that the obtained film is indium selenide. It is shown that the energy of exciton bonding in ultrathin InSe films grown on the surface of a liquid is 300 meV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.