Abstract
In this letter, we present a new velocity saturation model for molybdenum disulfide (MoS2) field-effect transistors (FETs) based on the surface potential. Unlike former models, in addition to modulating the field-effect mobility, our model adjusts the upper limit of current integration to its saturation value. Moreover, the expression of charge density at the drain under the velocity saturation effect is provided. As an example, the model is used to simulate the electrical characteristics of a MoS2 FET under different trap densities, temperatures, and channel lengths. A short channel device is fabricated and evaluated. The excellent agreement between the experimental data and the simulation results validates our model.
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