Abstract
A new unified analytical model for submicron MOSFETs, valid for all regions of operation (including deep subthreshold), is presented in this paper. It accounts for the changes in the subthreshold slope with respect to the applied drain voltage. A new unification technique is proposed, which preserves the continuity of the drain current and its derivatives with respect to the applied terminal voltages at the various operating region boundaries. It passes the benchmark tests of Tsividis and Suyama (IEEE J. Sol. St. Circ., 29 (1994) 210–216) adequately, and thus, is suitable for analog circuit computer-aided design work. Also, the simulated results match well with the experimental results for deep submicron channel length devices.
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