Abstract
A new thermal infrared (IR) detector using temperature characteristics of a diode has been developed. This micromachined isolated silicon diode for IR detection (MISIR) utilizes an electrochemical etching technique to achieve the thermal isolation of the diode. Exponential dependence of the diode current on the junction temperature enables a high responsivity of the MISIR and the electrochemical etch stop provides an effective isolation at low-cost. The fabricated MISIR has demonstrated a detectivity of 1.2×10 10 (cm Hz 1/2/W) at room temperature in air ambient.
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