A new type of periodie boundary condition useful for high-temperature atomistic simulations of grain boundaries: Applications in semiconductors

Abstract

A new type of boundary condition, named Mobius or antiperiodic boundary conditions, is proposed and tested, both analytically and within the context of numerical simulations. It is shown that these boundary conditions are very useful for twist grain boundary atomistic simulations. By contrast to the use of the ordinary Born von Karman periodic boundary conditions, they allow only one grain boundary per box instead of two. The risk of migration and overinteraction of two grain boundaries at high temperature is thus avoided while more complex grain boundaries can also be tackled at the same computer price. Such examples are presented and discussed.