Abstract
We report here a new type of p-doping for polyacetylene which seems to be very promising. The new dopant is the (CF 3SO 2) 2N− ion. It is possible to form salts with various counter-ions and to perform electrochemical or chemical doping. With electrochemical doping we reached a maximum doping level close to 8% and the conductivity increased up to 18 S/cm. We performed Raman measurements with various wavelengths and observed the characteristic peaks of cis and trans polyacetylene simultaneously. This behaviour can be interpreted as the result of an inhomogenous and weak doping of the sample. We observed also photoluminescence in these doped samples. We present also the dependence of the EPR linewidth as a function of the chemical doping time.
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