Abstract
The Raman line of a new hydrogen molecule at approximately 3820cm−1 has been observed for the first time in silicon after Si+ ion implantation with proper doses, followed by hydrogen atom treatment. The assignment was confirmed by isotope shifts to 2770cm−1 for D2 molecule and to 3353cm−1 for HD molecule. Both the ion-dose dependence and hydrogenation-temperature dependence of the Raman intensity of the H2 molecules correlate with those of the intensity of peaks of Si–H stretching observed at 1957±1.8cm−1 and at approximately 2185 and 2210cm−1. We propose a model where the hydrogen molecule corresponding to the 3820cm−1 vibrational line is trapped in or adjacent to small H-terminated multivacancies.
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