A new type of gas sensor based on the semiconductor-cleft-semiconductor structure

Abstract

The capacitive characteristics of a semiconductor-cleft-semiconductor structure created by means of cleavage are studied. The advantage of this method is the possibility of using various materials in different phase states as the dielectric in such a structure. The capacity of this structure depends on the applied voltage, the intensity of the incident optical radiation and the density of the charge on the surface of the semiconductors. Relaxation oscillations can form in the structure when the cleft is filled with an antiferroelectric.