A New Two-Dimensional Analytical Threshold Voltage Model for Short-Channel Triple-Material Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Abstract

A new analytical model for the surface potential and threshold voltage of triple-material surrounding-gate (TM-SGT) metal–oxide–semiconductor field-effect transistors (MOSFETs) is proposed to investigate short-channel effects (SCEs). The TM-SGT MOSFET forms a two-step potential in the channel and effectively reduces the SCEs and the variation of threshold voltage compared with those of dual-material surrounding-gate (DM-SGT) and triple-material double-gate (TM-DG) MOSFETs. TM-SGT MOSFETs thus have better performance than DM-SGT and TM-DG MOSFETs.