Abstract
A new two-dimensional (2D) analytical model for a Triple Material Gate (TM) GaN MESFET has been proposed and modeled to suppress the short channel effects and improve the subthreshold behavior. The analytical model is based on a two-dimensional analysis of the channel potential, threshold voltage and subthreshold swing factor for TM GaN MESFET is developed. The aim of this work is to demonstrate the improved subthreshold electrical performances exhibited by TM GaN MESFET over dual material gate and conventional single material gate MESFET. The results so obtained are verified and validated by the good agreement found with the 2D numerical simulations using the ATLAS device simulation software. The models developed in this paper will be very helpful to understand the device behavior in subthreshold regime for future circuit applications.
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