A new transient capacitance technique for the determination of interface traps in metal-oxide-semiconductor transistors

Abstract

A new method for determining the interface trap distribution is described. The measurements are performed on n-channel metal-oxide-semiconductor field-effect transistors and yield the densities of interface traps near the minority carrier band (0.04<Et−Ec<0.3). The technique reveals trap densities as low as 2×108 cm−2 eV−1. The sensitivity is high enough to still detect capacitance changes of the order of 0.01 pF out of the noise. The method is applicable to samples with nonuniform doping concentrations.