Abstract
A simple but accurate threshold voltage model for deep-submicron MOSFETs with nonuniform dopings is described in this paper. In this model, a simplified quasi-delta substrate doping profile is used to approximate the nonuniformity. We apply a hyperbola function to avoid the discontinuous problem at the boundary between different doping regions. By adjusting the parameter δ, the actual gradual doping profile can be obtained. A substrate-bias dependent model of short channel effect is also introduced which describes the reduction of substrate-bias effect in deep-submicron devices. The model developed is in good agreement with two-dimensional numerical simulation.
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