Abstract
Attempts have been made to give a new theoretical model for semiconductor bipolar realistic diodes. The fact that the realistic devices are not completely free from the effects of traps, defects, band to band radiative and non-radiative (Auger effect) transitions etc., leads to the mathematical solutions which show oscillatory variations (between two positive values) in the carrier density distributions. This directly leads to the deviation of a diode characteristics from those of the ideal diode. An application of the model has been made to a p- n junction. Experimental evidence of this deviation in the Schottky heterostructures found in the literature can act as a direct support of the model.
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