Abstract
A new test methodology for the analysis of SEE in power MOSFET is presented. It is based on the combined use of an Ion Electron Emission Microscope (IEEM) and an experimental set-up which is able to acquire the drain signals associated to the impacts during the irradiation. The charge generation sensitivity map of a 200V power MOSFET has been measured. It indicates the areas where the impacting particles generate the maximum charge. This map is strictly correlated with the sensitivity map of the device to SEB.
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