Abstract
A new temporary bonding technology has been demonstrated, where both spin-on glass (SOG) and hydrogenated amorphous silicon (a-Si:H) were used as a bonding layer and as a debonding layer, respectively. Square chips were bonded to a glass wafer through the SOG layer and a-Si:H layer. The SOG bonding was capable of withstanding chip thinning and high-temperature chemical vapor deposition (CVD) processes. A XeCl excimer laser was irradiated to the a-Si:H layer through the glass wafers for debonding the chips. A novel via-last/backside-via 3D integration process using temporary SOG bonding was also proposed for advanced multichip-to-wafer 3D integration with self-assembly.
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