Abstract
A new growth technique was developed as a method to obtain thick III-V mixed crystal layers applicable to substrate for opto-electronic devices. The distinctive feature is that a growth ampoule, in which a seed crystal and the alloy solution were put, was rotated at high speed, while the crystal growth was initiated by lowering the solution temperature. The occurrence of constitutional supercooling near the growth interface was avoided by agitation of the solution due to the high speed rotation, and as a result it was possible to grow InSb 1- x Bi x and In x Ga 1- x Sb mixed crystal layers of 10 to 20 mm thicknesses on InSb and GaSb seed crystals, respectively.
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