Abstract
A new technique has been developed for the preparation of continuous thin single crystal films of copper of 180–250 å thick. The technique employs two stages of evaporation. During the first stage of evaporation copper nuclei approximately 800 Å thick are formed on a preheated mica substrate. These nuclei are then used to influence the lateral growth of subsequently deposited copper layers and thus to enhance the formation of a continuous single crystal film during the second stage of evaporation.
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