Abstract
Abstract A new technique for growing HgI 2 single crystals is presented, based on the moving vapor growth method from the melt. Apart from moving the ampoule in a two zone furnace there is an additional rotation that ensures the uniformity in the heating of the ampoule. The optimum conditions are temperature gradient 5°C/cm, ampoule velocity 2 mm/day and ampoule rotation rate 1 turn/h. Differential calorimetric studies have confirmed the influence of the growth procedure and the pre treatment of the sample on the transition temperatures.
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