Abstract
The etched back planar process utilizes a nonselective reactive ion beam etching (RIBE) technique both for semiconductor layers and for photoresist. Application of the technique to the fabrication of a planar InP-InGaAs embedded p-i-n photodiode is discussed. The groove depth on the wafer was reduced from 5.3 mu to 0.6 mu m, and the wafer was nearly planarized. Estimates based on photoluminescence intensity variation and the characteristics of the fabricated p-i-n photodiode indicate that little damage was incurred during the process. These results indicate that fabrication of planar OEICs by means of this process is feasible.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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