Abstract
The well-known γ-surface concept originally proposed by V.Vitek [1] has been extended to the case of the shift of one part of the crystal with respect to another in two adjacent {111} planes of the stacking fault. The proposed approach has been applied for evaluation of the effective γ-surface in {111} crystallographic plane in L12 Ni3Al. Five stable planar stacking faults has been found, in particular, superlattice intrinsic stacking fault (SISF), superlattice extrinsic stacking fault (SESF), complex stacking fault (CSF), antiphase boundary (APB) and complex extrinsic stacking fault (CESF). The last planar fault configuration has neither been observed experimentally nor predicted analytically in L12 Ni3Al before.
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