Abstract

With the technique of oblique rotating implantation, the large-angle-tilt (LAT) LDD implant was followed by a low energy and large angle tilt BF/sub 2/ surface counter dope (named as SCD) implant which reduces the surface concentration of LDD region and results in a very light n/sup -/ layer on top of the n/sup -/ drain layer where the lateral electric fields and impact ionization rates are significantly suppressed. Consequently, a 0.35 mu m of effective channel length MOSFET was fabricated which revealed a superior and reliability over LATIDs. The hot carrier reliability is increased in this SCD-LDD structure as compared with controlled LATID's. >

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