Abstract
A novel high-power AlGaAs laser structure, which is named MBG (melt-back-grown)-NAM (non-absorbing mirror), has been proposed. The NAM regions are formed on both sides of the resonant facets to prevent the catastrophic optical damage due to the optical absorption, which causes local temperature rise of the facets. Instead of conventional chemical wet etching, the melt-back process technique during the liquid phase epitaxy was used to form window regions to prevent the interface degradations. It is observed that the maximum output power of the laser diodes with the new structure was three times higher than that of the conventional-structure laser. Therefore, the new method of forming the non-absorbing mirror region can be considered quite effective to reduce the interface defects between the NAM and internal active region.
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