Abstract
A new Insulated-Gate Thyristor structure with the N/sup -/ base and P base regions of the thyristor coupled by a n-channel MOSFET is described. This configuration eliminates the parasitic lateral bipolar transistor present in previously reported MOS gated thyristor structures. This configuration leads to low on-state drop close to that of a 1-D thyristor and high controllable current density.
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