A new strategy for fabricating low haze p-type CuI film

Abstract

As an intrinsic p-type transparent conductor with a wide band gap of 3.1 eV, γ-CuI full of potential has gradually attracted the attention of researchers. However, γ-CuI films deposited by various techniques generally exhibit high haze with a frosted glass-like appearance, which significantly affects the device performance. Herein, a new strategy is proposed in which true p-type CuI thin films with low haze have been successfully synthesised at room temperature. The specular transmittance of the CuI film over 85% in the visible region (400–800 nm) can be achieved. The haze of the as-prepared γ-CuI films can be as low as 0.7%. Meanwhile, the as-prepared CuI film has an FOM as high as 230 MΩ−1. This ideal stable p-type optoelectronic performance was significant among various typical p-type transparent conductive films.