Abstract
Silicon photomultipliers (SiPMs) are emerging semiconductor-based photosensors, addressing the challenge of low-light detection down to the single-photon counting level. A design of high-performance front-end electronics for SiPM readout requires the development of accurate electrical models. Numerous SiPM reliable models have matured in recent years; however, circuit parameter extraction is rather cumbersome and involves extensive measurement steps to be performed. Starting from a recently developed model of the SiPM device coupled to the conditioning electronics, a new effective analytical procedure is, here, devised for extracting the SiPM model parameters from experimental measurements. The proposed extraction technique is applied to a $3\times 3$ -mm2 SiPM sensor, and is validated by comparing SPICE simulations and measurement results. Independent cross-check validation based on experimental tests corroborates the effectiveness of the adopted extraction procedure.
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