Abstract
AbstractA silicon‐based photoconductive microwave switch has been designed and fabricated within a coplanar waveguide on a high resistivity Si substrate. This device offers improved signal attenuation per incident optical power when compared with other types of optically controlled attenuators that have been reported. Attenuation of more than 30 dB was achieved by illumination from a single infrared LED. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 248–252, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23961
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