Abstract
We describe a new self-aligned recessed-gate InP MESFET. In this structure, material selective and anisotropic etching properties of InP/InGaAsP system are utilized to alleviate the difficulties associated with channel recess and gate alignment. Using this technique a 1-µm Al-gate InP MESFET with a transconductance ∼ 110 mS/mm is demonstrated.
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