A New Sample Structure for Position-Controlled Giant-Grain Growth of Silicon using Phase-Modulated Excimer-Laser Annealing

Abstract

A new sample structure has been proposed for position-controlled growth of giant Si grains by a phase-modulated excimer-laser annealing method. The sample consists of a layered structure with an organic silica underlayer at the bottom for reducing the heat removal rate from the Si layer placed on it, and a thick silica capping-layer on the top, for enlarging the amount of excess stored heat. These layers effectively elongated the grain growth time, resulting in the long lateral grain growth to 24 µm. In addition, a sample having a buried silica island array in the Si layer has also been proposed for achieving two-dimensional position control, where the island determines the starting position of the lateral grain growth. By combining these technologies, we have grown single crystals of Si grains as large as 12 µm at pre-designated positions by single-shot irradiation.